Ieee Iedm 2024

Ieee Iedm 2024. 10 nm channel length indium tin oxide transistors with i on =1860 ua/um, gm = 1050 us/um at v ds = 1v with beol compatibility. The ieee international electron devices meeting (iedm) is the premier event for the world's leading semiconductor and electronic device.


Ieee Iedm 2024

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